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Evaluation of the Degradation Dynamics of Thin Silicon Dioxide Films Using Model-Independent Procedures

Published online by Cambridge University Press:  10 February 2011

R. Rodríguez ,
M. Nafría ,
E. Miranda ,
J. Suñé  and
X. Aymerich
R. Rodríguez
Affiliation:
Dept. Enginyeria Electrònica., Universitat Autonòma de Barcelona. 08193 Bellaterra. Barcelona. Spain, E-mail: R.Rodriguez@cc.uab.es
M. Nafría
Affiliation:
Dept. Enginyeria Electrònica., Universitat Autonòma de Barcelona. 08193 Bellaterra. Barcelona. Spain, E-mail: R.Rodriguez@cc.uab.es
E. Miranda
Affiliation:
Dept. Enginyeria Electrònica., Universitat Autonòma de Barcelona. 08193 Bellaterra. Barcelona. Spain, E-mail: R.Rodriguez@cc.uab.es
J. Suñé
Affiliation:
Dept. Enginyeria Electrònica., Universitat Autonòma de Barcelona. 08193 Bellaterra. Barcelona. Spain, E-mail: R.Rodriguez@cc.uab.es
X. Aymerich
Affiliation:
Dept. Enginyeria Electrònica., Universitat Autonòma de Barcelona. 08193 Bellaterra. Barcelona. Spain, E-mail: R.Rodriguez@cc.uab.es
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Abstract

The degradation and breakdown of thin silicon dioxide films has been analysed using a two-step stress method. This procedure allows the evaluation of the degradation induced by the electrical stress without any assumption about the microscopic nature of the degradation process. The method has been used to analyse and compare the degradation dynamics when constant-voltage (CVS) and constant-current stresses (CCS) are applied to the oxide. Moreover, it is shown that in the case of CVS, the fitting of the I-t characteristics can provide quantitative information about the degradation (degradation rate) and breakdown (mean-time-to-breakdown), without taking into account any degradation model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 147
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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