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Evidence for Hydrogen-Hydrogen Interactions During Diffusion in a-Si:H

Published online by Cambridge University Press:  21 February 2011

W. B. Jackson ,
C.C. Tsai  and
P. V. Santos
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C.C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
P. V. Santos
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The effects of H concentration on H transport has been measured by deuteration of H depleted samples which were re-hydrogenated at various concentrations and on samples subjected to various annealing protocols. A remarkable observation is that the trap density appears to increase with H concentration. Extended thermal annealing appears to increase the trap depth but does not markedly alter the number of traps. The results suggest that H introduced from the plasma is less strongly bound than H residing in the film during annealing. Nucleation and growth of H clusters is introduced as a possible model accounting for these transport results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 319
Copyright
Copyright © Materials Research Society 1992

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References

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