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Evidence for Polycrystalline Si Surface Layer Formation by Argon Implantation and its Passivation by Atomic Hydrogen

Published online by Cambridge University Press:  25 February 2011

H.-C. Chien ,
S. Ashok  and
J. H. Slowik
H.-C. Chien
Affiliation:
Engineering Science Program, the Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Engineering Science Program, the Pennsylvania State University, University Park, PA 16802
J. H. Slowik
Affiliation:
Xerox Webster Research Center, Webster, NY 14580
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Abstract

Al/p-Si Schottky barriers formed on wafers implanted with 10–20 keV Ar exhibit low-temperature electrical properties characteristic of grain boun1dary transport Subsequent low-energy (0.4 keV), high fluence ( ∼ IOE18 cm−2) H implant is found to passivate the grain boundaries of the Ar implant-induced microcrystals. Extremely high Al/p-Si Schottky barrier heights are obtained following the dual implants, and deep level transient spectroscopy (DLTS) measurements reveal that H also alters the properties of traps introduced by the Ar implant, thus improving the diode characteristics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 203
Copyright
Copyright © Materials Research Society 1987

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References

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