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Excimer-Laser-Assisted Etching of Gallium Arsenide: The Effect of Substrate Temperature

Published online by Cambridge University Press:  26 February 2011

Michael R. Berman
Michael R. Berman*
Affiliation:
McDonnell Douglas Research Laboratories, P. O. Box 516, St. Louis, MO 63166
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Abstract

The excimer-laser-assisted etching of GaAs in Cl2 at 308 nm has been studied as a function of substrate temperature in the range of 23 to 150°C. Rectangular channels were etched into (100)-oriented, undoped GaAs wafers. The fluence from the xenon chloride excimer laser at the GaAs surface was 175 mJ/cm2. At temperatures below 75°C, the etch rate was independent of substrate temperature and the etch rate increased with Cl2 pressure from 0.4 to 2.0 Torr. At substrate temperatures above 75°C, the etch rate increased with increasing substrate temperatures and was independent of Cl2 pressure. Analysis of the temperature dependence of the total etch rate above 75°C according to an Arrhenius expression gave an activation energy of 11.8 kcal/mol, which is consistent with the enthalpy of vaporization of GaCl3. The onset of the temperature dependent region coincides with the melting point of GaCl3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 471
Copyright
Copyright © Materials Research Society 1991

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