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Excitation Wavelength and Saturation Effects on Gallium Nitride Photoluminescence

Published online by Cambridge University Press:  21 February 2011

Mike Banas ,
Guangtian Liu ,
Jeff Ramer ,
Kang Zheng ,
Steve Hersee  and
Kevin Malloy
Mike Banas
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131.
Guangtian Liu
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131.
Jeff Ramer
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131.
Kang Zheng
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131.
Steve Hersee
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131.
Kevin Malloy
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131.
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Abstract

We report on the excitation wavelength and power dependence of LPMOCVD grown GaN photoluminescence (PL). A mode-locked Ti:Sapphire laser that is doubled to provide a tunable wavelength range of 350-500 nm is used to pump the GaN samples. Special attention has been paid to the “yellow” (∼567 nm) luminescence. Different power dependence characteristics of the yellow emission are observed when pumping above and below the bandgap. A measurement of the photoluminescence excitation spectrum of the yellow peak (∼567 nm) is also performed and this spectrum shows a peak at room temperature at 3.36 eV (369 nm), an additional broad peak at 77 K and only the broad peak at 7 K. An excitation model is used to explain the behavior of the yellow emission, suggesting the neutral donor serves as a key species for the yellow emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 583
Copyright
Copyright © Materials Research Society 1996

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References

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