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Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

Published online by Cambridge University Press:  01 February 2011

V. Yu. Timoshenko ,
O. A. Shalygina ,
M. G. Lisachenko ,
P. K. Kashkarov ,
D. Kovalev ,
J. Heitmann ,
M. Zacharias ,
B. V. Kamenev  and
L. Tsybeskov
V. Yu. Timoshenko
Affiliation:
Moscow State M.V. Lomonosov University, Physics Department, 119992 Moscow, Russia
O. A. Shalygina
Affiliation:
Moscow State M.V. Lomonosov University, Physics Department, 119992 Moscow, Russia
M. G. Lisachenko
Affiliation:
Moscow State M.V. Lomonosov University, Physics Department, 119992 Moscow, Russia
P. K. Kashkarov
Affiliation:
Moscow State M.V. Lomonosov University, Physics Department, 119992 Moscow, Russia
D. Kovalev
Affiliation:
Munich Technical University, Physics Department E16, 85747 Garching, Germany
J. Heitmann
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
M. Zacharias
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
B. V. Kamenev
Affiliation:
Electrical and Computer Engineering Department, New Jersey Institute of Technology, University Heights, Newark NJ 07102
L. Tsybeskov
Affiliation:
Electrical and Computer Engineering Department, New Jersey Institute of Technology, University Heights, Newark NJ 07102
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Abstract

Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N11.2
Copyright
Copyright © Materials Research Society 2004

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References

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