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Experiments on the Elastic Size Dependence of LPCVD Silicon Nitride

Published online by Cambridge University Press:  01 February 2011

Yuxing Ren
Affiliation:
Department of Mechanical Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
David C. C. Lam
Affiliation:
Department of Mechanical Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
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Abstract

Recent experimental observations showed significant elastic size effects in small scales. While surface stress theories are used to describe nanometer scale size effects, strain gradient theories describe size effect observed in micron sized epoxy. Size effects in single crystalline silicon and epoxy make it unclear whether there is size dependence of the elastic behaviors of widely used LPCVD silicon nitride thin films in submicron scale. In this paper, submicron thick LPCVD silicon nitride beams were fabricated and bending tests were conducted on the beams. Results showed fluctuating normalized bending rigidities in the beams with different thickness. XPS and XRD analyses were used to analyze the material consistency of the beams. The fluctuations maybe related to varying crystalline phase fractions in the thin films. The beams were annealed and bending tests were conducted to investigate possible correlation between the fluctuations and crystalline phase fractions. Results showed similar level of fluctuations in normalized bending rigidities before and after annealing while XRD results of the annealed films showed increase in crystalline phase fractions for all thicknesses. While LPCVD silicon nitride may have size dependence in the nanometer scale, size dependence of normalized bending rigidity of LPCVD silicon nitride appears to be insignificant in submicron scale.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1. Streitz, F. H., Cammarata, R. C., and Sieradzki, K., Phys. Rev. B-Condensed Matter 49, 1069910706, (1994).Google Scholar
2. Wolf, D., Appl. Phys. Lett. 58, 20812083, (1991).Google Scholar
3. Li, X., Ono, T., Wang, Y., and Esashi, M., Technical Digest. MEMS 2002 IEEE International Conference. Fifteenth, 427-430, (2002).Google Scholar
4. Popov, V. N., Doren, V. E. Van, and Balkanski, M., Sol. St. Comm. 114, 395399, (2000).Google Scholar
5. Li, C. and Chou, T.-W., Int. J. Solids & Structures 40, 24872499, (2003).Google Scholar
6. Goze, C., Vaccarini, L., Henrard, L., Bernier, P., Hernandez, E., and Rubio, A., Elsevier. Synth. Met. 103, 25002501, (1999).Google Scholar
7. Chang, T. and Gao, H., Journal of the Mechanics and Physics of Solids 51, 10591074, (2003).Google Scholar
8. Lam, D. C. C., Yang, F., Chong, A. C. M., Wang, J., and Tong, P., Journal of the Mechanics and Physics of Solids 51, 14771508, (2003).Google Scholar
9. Grow, R. J. and Minne, S. C., J. Microelectromech. Syst. 11, 317321, (2002).Google Scholar
10. Belyi, V. I. and Vasilyeva, L. L., Silicon nitride in electronics, (Amsterdam; New York: Elsevier, 1988).Google Scholar
11. Kawaoka, H., Adachi, T., Sekino, T., Choa, Y-H., Gao, L., Niihara, K., J. Mat. Res. 16, 22642270, (2001)Google Scholar
12. Madou, M. J., Fundamentals of microfabrication. (Boca Raton, Fla: CRC Press, 1997).Google Scholar
13. Toivola, Y., Thurn, J., Cook, R. F., Cibuzar, G., and Roberts, K., J. Appl. Phys. 94, 6915, (2003).Google Scholar
14. Rousset, B., Furgal, L., Fadel, P., Fulop, A., Pujos, D., and Temple-Boyer, P., EDP Sciences. Journal de Physique IV 11, Pr3937, (2001).Google Scholar
15. Olson, J. M., Mater. Sci. Semicond. Process. 5, 5160, (2002).Google Scholar
16. Rosen, I. G., Parent, T., Fidan, B., Wang, C., and Madhukar, A., IEEE Trans. on Control Systems Technology 10, 6475, (2002)Google Scholar
17. Zhang, T.-Y., Zhao, M.-H., and Qian, C.-F., J. Mat. Res. 15, 18681871, (2000).Google Scholar
18. Lobontiu, N. and Garcia, E., J. Microelectromech. Syst. 13, 4150, (2004).Google Scholar
19. Knapp, J. A. and d. B. M. P., J. Microelectromech. Syst. 11, 754764, (2002).Google Scholar