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Extended State Mobility and Tail State Distribution of a-Si1-xGex:H Alloys

Published online by Cambridge University Press:  26 February 2011

C. E. Nebel ,
H. C. Weller  and
G. H. Bauer
C. E. Nebel
Affiliation:
Institut f. Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F. R. Germany
H. C. Weller
Affiliation:
Institut f. Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F. R. Germany
G. H. Bauer
Affiliation:
Institut f. Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F. R. Germany
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Abstract

Time-of-flight (TOF) and charge collection measurements are evaluated to determine electron transport quality of a-Si1−x Gex:H for 0 ≤ x ≤ 0.3. The drift mobility data are used to calculate the tail state distribution at the conduction band, which turns out to be of hybrid structure (flat linear followed by a steep exponential decay). By incorporation of Ge additional localization introduced by chemical disorder broadens the band tail. The dangling bond density, calculated from electron µDTE products, also dramatically increases. Both effects contribute to the drop of photoelectronic quality of a-Si1−xGex: H alloys.

In addition it is shown that the extended state mobility deduced from TOF experiments reflects a tunneling transport mechanism in localized states above a dominant transport level that separates states with high tunnel probability from states where carriers propagate via thermal release from and capture into localized states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 507
Copyright
Copyright © Materials Research Society 1988

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