Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-20T08:16:18.280Z Has data issue: false hasContentIssue false
  • English
  • Français

Extreme Supersaturation of Oxygen in Low Temperature Epitaxial Silicon and Silicon-Germanium Alloys

Published online by Cambridge University Press:  25 February 2011

P.V. Schwartz ,
J.C. Sturm ,
P.M. Garone  and
S.A. Schwarz
P.V. Schwartz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
P.M. Garone
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S.A. Schwarz
Affiliation:
Bell Communications Research, Inc., Red Bank, New Jersey 07701
Get access

Abstract

We report the low temperature growth (625 - 700 °C) of epitaxial silicon and silicon-germanium alloy films by vapor phase techniques with oxygen concentrations approximately 1020 cm-3. These concentrations are well above the accepted solid solubility for oxygen in silicon. The films, however, have excellent structural and electrical properties with virtually no stacking faults or “haze”. Infrared transmission analysis suggests the possible presence of OH, but the exact nature of the oxygen is not known.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 591
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Gibbons, J.F., Gronet, C.M. and Williams, K.E., Appl. Phys. Lett. 47, 721–723 (1985)Google Scholar
2 Kaiser, W. and Keck, P.H., J. Appl. Phys. 28, 882 (1957)Google Scholar
3 Hu, S.M., J. Appl. Phys. 51 (11), 5945–5948 (1980)Google Scholar
4 Stolen, R.H. and Walrafen, G.E., J. Chem. Phys. 64, (6), 2623–2631 (1976)Google Scholar
5 Sturm, J.C., Prinz, E.J., Garone, P.M., Schwartz, P.V., Appl. Phys. Lett., 54 (26), 2707–2709 (1989)Google Scholar
6 King, C.A., Hoyt, J. L., Gronet, C.M., Gibbons, J.F., Scott, M.P., and Turner, J., Elect. Dev. Lett., 10 (2), 52–54 (1989)Google Scholar