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Fabrication and Characterization of Metal-Ferroelectric-Gan Structures

Published online by Cambridge University Press:  03 September 2012

W.P. Li ,
R. Zhang ,
J. Yin ,
X.H. Liu ,
Y.G. Zhou ,
B. Shen ,
P. Chen ,
Z.Z. Chen ,
Y. Shi  and
R.L. Jiang
...Show all authors
W.P. Li
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
R. Zhang
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
J. Yin
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
X.H. Liu
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
Y.G. Zhou
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
B. Shen
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
P. Chen
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
Z.Z. Chen
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
Y. Shi
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
R.L. Jiang
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
Z.G. Liu
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
Y.D. Zheng
Affiliation:
National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China
Z.C. Huang
Affiliation:
Raytheon ITSS, 4500 Forbes Boulevard, Maryland 20771
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Abstract

GaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 µm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.5
Copyright
Copyright © Materials Research Society 1999

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References

1. Egawa, T., Jimbo, T., and Umeno, M., J. Appl. Phys. 82,5816 (1997).Google Scholar
2. Ren, F., Hong, M., Chu, S. N. G., Marcus, M. A., Schurman, M. J., A. Baca. Appl. Phys. Lett. 73. 3893. (1998).Google Scholar
3. Arulkmaran, S., Jimbo, T., Ishikawa, H., Arulkumaran, S., Egawa, T.. Appl. Phys. Lett. 73. 809. (1998)Google Scholar
4. Casey, H. C. Jr., Gfoutain, G., Alley, R. G., Keller, B. P., and DenBarrs, Steven P.. Appl. Phys. Lett. 68. 1850. (1996).Google Scholar
5. Wu, S. Y., IEEE Trans. Electron Dev. ED–21, 499 (1973).Google Scholar
6. Wu, S. Y., Ferroelectrics 11, 379 (1976).Google Scholar
7. Rost, Timonthy A., Lin, He, and Rabson, Thomas A. Appl. Phys. Lett. 59, 3654(1991).Google Scholar
8. Alexe, Marin. Appl. Phys. Lett. 72, 2283. (1998)Google Scholar
9. Senzaki, Junji, Kurihara, Koji, Namura, Naoki, Mitsunaga, Osamu, Iwasaki, Yoshitaka and Ueno, Tomo. Jpn. J. Appl. Phys. 37, 5150. (1998)Google Scholar
10. Kijima, Takeshi and Matsunaga, Hironori, Jpn. J. Appl. Phys. 37 (1998) 5171.Google Scholar
11. Senzaki, Junji, Kurihara, Koji, Nomura, Naoki, Mitsunaga, Osamu, Iwasaki, Yoshitaka and Ueno, Tomo, Jpn. J. Appl. Phys. 37 (1998) 5171.Google Scholar
12. Kijika, Takeshi, Satoh, Sakiko, Matsunaga, Hironori and Koba, Masatoshi, Jpn. J. Appl. Phys. 35 (1995) 1246.Google Scholar
13. Lee, Joon, Choi, Young-Chul, and Lee, Byung, Jpn. J. Appl. Phys. 36 (1997) 3644 Google Scholar
14. Morimoto, Y.. J. Electrochem. Soc. 121, 1381. (1974)Google Scholar
15. Shen, B., Zhou, Y. G., Chen, P., Chen, Z. Z., Zang, L., Zhang, R., Shi, Y.. Zheng, Y. D.. Appl. Phys. A 68, 593. (1999)Google Scholar
16. Zhou, Y. G., Shen, B., Chen, Z. Z., Chen, P., Zhang, R., Shi, Y., Zheng, Y. D.. Chinese Journal of Semiconductor 20, 147. (1999)Google Scholar