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Fabrication of a High-Power Gan Metal Semiconductor Field-Effect Transistor

Published online by Cambridge University Press:  17 March 2011

Seikoh Yoshida  and
Hirotatsu Ishii
Seikoh Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Hirotatsu Ishii
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
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Abstract

A high-power metal semiconductor field-effect transistor (MESFET) for operating at a very large-current using GaN is reported for the first time. GaN was grown by metalorganic chemical vapor deposition (MOCVD). Sapphire substrates were used for GaN growth. A GaN MESFET with a large size was fabricated. Multi-finger gates were used for large-current operation. The total gate width was 8 cm and the gate length was 2 νm. The electrode materials of the source and the drain were Al/Ti/Au and the schottky electrodes were Pt/Au. The gate, source, and drain were isolated using SiO2. An FET structure was fabricated using a dry-etching technique. Multi-electrode structures were also fabricated using SiO2 for isolating the source, drain, and gate electrodes, respectively. The FET was operated at a current of over 5 A. The breakdown voltage was over 500 V. The transconductance (gm) was about 12 mS/mm. The pinch-off voltage was about -8 V. We confirmed that this GaN MESFET can also be operated at a current of 10 A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G13.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Chow, T. P. and Tyagi, R., IEEE Trans. Electron Devices 41, 1481, (1994).Google Scholar
2. Morkoc, H., Strites, S., Gao, G. B., Lin, M. E., Sverdlov, B. and Burns, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
3. Binari, S. C., Rowland, B. L., Kruppa, W., Kelner, G., Doverspike, K. and Gaskill, D. K., Electron. Lett. 30, 1248 (1994).Google Scholar
4. Khan, M. A., Shur, M. S., Kuzunia, J. N., Chin, Q., Burm, J. and Schaff, W., Appl. Phys. Lett. 66, 1083 (1995).Google Scholar
5. Ozgur, A., Kim, W., Fan, Z., Botchkarev, A., Salvador, A., Mohammad, S. N., Sverdlov, B. and Morkoc, H., Electron. Lett. 31, 1389 (1995).Google Scholar
6. Akutas, O., Fan, Z. F., Mohammad, S. N., Botchkarev, A. E. and Morkoc, H., Appl. Phys. Lett. 69, 3872 (1996).Google Scholar
7. Binari, S. C., Doverspike, K., Kelner, G., Dietrich, H. B. and Wickenden, A. E., Solid State Electron. 41, 97 (1997).Google Scholar
8. Pankove, J., Chang, S. S., Lee, H. C., Molnar, R. J., Moustakas, T. D. and Zeghbroeck, B. Van, IEDM Tech. Dig., 389 (1994).Google Scholar
9. Yoshida, S. and Suzuki, J., Jpn. J. Appl. Phys. Lett. 37, L482 (1998).Google Scholar
10. Yoshida, S. and Suzuki, J., J.Appl. Phys. 85, 7931 (1999).Google Scholar
11. Yoshida, S. and Suzuki, J., MRS Internet J. Nitride Semicond. Res 539, W4.8 (2000).Google Scholar