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Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks

Published online by Cambridge University Press:  21 March 2011

Mi Jung ,
Hong Seok Lee ,
Hong Lee Park  and
Sun-Il Mho
Mi Jung
Affiliation:
Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Korea
Hong Seok Lee
Affiliation:
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
Hong Lee Park
Affiliation:
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
Sun-Il Mho
Affiliation:
Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Korea
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Abstract

The uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 νm to 5 νm with the nanochannels of ∼ 80 nm diameter and the pore density of ∼ 1010cm−2. When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 νm. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 818: Symposium M – Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory , 2004 , M11.38.1
Copyright
Copyright © Materials Research Society 2004

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