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Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects
Published online by Cambridge University Press: 15 February 2011
Abstract
Parylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.
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- Copyright © Materials Research Society 1996
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