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Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE

Published online by Cambridge University Press:  03 September 2012

Hideto Miyake ,
Motoo Yamaguchi ,
Masahiro Haino ,
Atsushi Motogaito ,
Kazumasa Hiramatsu ,
Shingo Nambu ,
Yasutoshi Kawaguchi ,
Nobuhiko Sawaki ,
Yasushi Iyechika  and
Takayoshi Maeda
...Show all authors
Hideto Miyake
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie, 514-8507, Japan
Motoo Yamaguchi
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie, 514-8507, Japan
Masahiro Haino
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie, 514-8507, Japan
Atsushi Motogaito
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie, 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Dept. of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie, 514-8507, Japan
Shingo Nambu
Affiliation:
Dept. of Electronic Engineering, Nagoya University, Furo, Chikusa, Nagoya, 464-8603
Yasutoshi Kawaguchi
Affiliation:
Dept. of Electronic Engineering, Nagoya University, Furo, Chikusa, Nagoya, 464-8603
Nobuhiko Sawaki
Affiliation:
Dept. of Electronic Engineering, Nagoya University, Furo, Chikusa, Nagoya, 464-8603
Yasushi Iyechika
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, 6 Kitahara, Tsukuba, 300-3294, Japan
Takayoshi Maeda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, 6 Kitahara, Tsukuba, 300-3294, Japan
Isamu Akasaki
Affiliation:
Dept. of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nogoya 468-8502, Japan
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Abstract

A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 °C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window = 2/2 νm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W2.3
Copyright
Copyright © Materials Research Society 1999

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References

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