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Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

Published online by Cambridge University Press:  27 March 2015

Abdelrahman Zkria ,
Hiroki Gima ,
Sausan Al-Riyami  and
Tsuyoshi Yoshitake
Abdelrahman Zkria
Affiliation:
Dept. of Appl. Sci. for Electr. & Mat., Kyushu Univ., Kasuga, Fukuoka 816-8580, Japan. Physics Dept., Aswan Fac. of Sci., Aswan Univ., Aswan 81542, Egypt.
Hiroki Gima
Affiliation:
Dept. of Appl. Sci. for Electr. & Mat., Kyushu Univ., Kasuga, Fukuoka 816-8580, Japan.
Sausan Al-Riyami
Affiliation:
Dept. of Math. & Sci., German Univ. of Techn. in Oman, Barka, Sultanate of Oman
Tsuyoshi Yoshitake
Affiliation:
Dept. of Appl. Sci. for Electr. & Mat., Kyushu Univ., Kasuga, Fukuoka 816-8580, Japan.
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Abstract

Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content.

Keywords

diamondphysical vapor deposition (PVD)grain boundaries
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1734: Symposium R – Diamond Electronics and Biotechnology—Fundamentals to Applications , 2015 , mrsf14-1734-r03-16
Copyright
Copyright © Materials Research Society 2015 

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