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Fabrication of Luminescent Porous Silicon with Stain Etches and Evidence that Luminescence Originates in Amorphous Layers

Published online by Cambridge University Press:  15 February 2011

R. W. Fathauer ,
T. George ,
A. Ksendzov ,
T. L. lin ,
W. T. Pike ,
R. P. Vasquez  and
Z.-C. Wu
R. W. Fathauer
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
T. George
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
A. Ksendzov
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
T. L. lin
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
W. T. Pike
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
R. P. Vasquez
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
Z.-C. Wu
Affiliation:
Health and Safety Research Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181
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Extract

Stain films on Si wafers produced in solutions of HF:HNO3:H2O have been studied for over 30 years [1], and have been suggested [1] to be similar in nature to the anodically-etched porous Si films first demonstrated by Uhlir [2]. More recently, it was shown that stain films produced by etching Si in solutions of NaNO2 in HF and CrO3 in HF were similar in structure to porous Si films produced by anodic etching [3]. In fact, in the etching of Si by HF:HNO3:H3O solutions, the oxidation reaction chemistry is recognized to be the same as that of anodic oxidation, with points on the Si surface behaving randomly as localized anodes and cathodes [4]

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 165
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Archer, R.J., J. Phys. Chem. Solids 14, 104 (1960).CrossRefGoogle Scholar
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[4] Ghandi, Sorab K., VLSI Fabrication Principles (Wiley, New York, 1983), pp. 478–482.Google Scholar
[5] Fathauer, R.W., George, T., Ksendzov, A., and Vasquez, R.P., to be published in Appl. Phys. Lett. (1992).Google Scholar
[6] Garnett, J.C.M., Philos. Trans. R. Soc. London 203, 385 (1904); 205, 237 (1905).Google Scholar
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