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Fabrication of Multi-Level Buried Oxide Layers by Oxygen-Ion-Implantation into Si/Ge multilayers

Published online by Cambridge University Press:  03 September 2012

Toshio Ogino ,
Yoshihiro Kobayashi ,
Kuniyil Prabhakaran  and
Koji sumitomo
Toshio Ogino
Affiliation:
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan, ogino@will.brl.ntt.co.jp
Yoshihiro Kobayashi
Affiliation:
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan, ogino@will.brl.ntt.co.jp
Kuniyil Prabhakaran
Affiliation:
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan, ogino@will.brl.ntt.co.jp
Koji sumitomo
Affiliation:
NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan, ogino@will.brl.ntt.co.jp
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Abstract

We propose a novel technique based on preferential oxidation of Si in the Si/Ge system. Oxygen ions were implanted at 30 keV into Si/Ge multilayers while the substrate temperature was kept below 100°C. Significant oxygen concentration was then observed at the Si/Ge interfaces and at a thin Si layer embedded into the Ge layer. When the samples were then annealed above 400°c, the bonding state of the Si oxide approached that of SiO2. During this process, Ge atoms were expelled from the oxide layers. Transmission electron microscopy confirmed that silicon dioxide layers were formed. This new technique can be used to form semiconductor/insulator multilayered structures from Si/Ge multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 211
Copyright
Copyright © Materials Research Society 1997

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