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Fabrication of Nano-Crystalline Porous Silicon on Si Substrates by a Plasma Enhanced Hydrogenation Technique

Published online by Cambridge University Press:  01 February 2011

Y. Abdi ,
P. Hashemi ,
F. Karbassian ,
F.D. Nayeri ,
A. Behnam ,
S. Mohajerzadeh ,
J. Koohsorhki ,
M.D. Robertson  and
E. Arzi
Y. Abdi
Affiliation:
Thin Film Laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca Department of Physics, University of Tehran, Tehran, Iran.
P. Hashemi
Affiliation:
Thin Film Laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca
F. Karbassian
Affiliation:
Thin Film Laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca
F.D. Nayeri
Affiliation:
Thin Film Laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca
A. Behnam
Affiliation:
Thin Film Laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca
S. Mohajerzadeh
Affiliation:
Thin Film Laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca
J. Koohsorhki
Affiliation:
Thin Film Laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail: smohajer@vlsi.uwaterloo.ca Department of Physics, University of Tehran, Tehran, Iran.
M.D. Robertson
Affiliation:
Department of Physics, Acadia University, Wolfville, NS,Canada.
E. Arzi
Affiliation:
Department of Physics, University of Tehran, Tehran, Iran.
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Abstract

A novel plasma hydrogenation method for the fabrication of nano-crystalline structures of silicon as well as the photoluminescence and structural properties of these porous structures is presented. We have observed that the hydrogenation process followed by an annealing treatment results in the formation of nano-crystalline silicon structures where increased temperatures during hydrogenation reduces the grain size. Furthermore, by increasing the time of the hydrogenation process, the density of the silicon grains is increased.

Photoluminescence (PL) spectroscopy demonstrated the presence of a direct gap in the visible light range where materials with a smaller grain size emitted light at lower wavelengths, and a higher density of grains resulted in higher amplitudes in the PL spectrum. TEM and SEM characterization of these samples and the structure-emission relationship are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A19.1
Copyright
Copyright © Materials Research Society 2005

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References

1 Canham, L.T.; “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers”; Appl. Phys. Lett. 57 (1990) 1046.10.1063/1.103561Google Scholar
2 Aouida, S., Saadoun, M., Boujmil, M.F., Rabha, M. Ben, Bessai̤s, B.; “Effect of UV irradiations on the structural and optical featuresof porous silicon: application in silicon solar cells”; Applied Surface Science 238 (2004) 193–198.10.1016/j.apsusc.2004.05.209Google Scholar
3 Hirschman, K.D., Tsybeskov, L., Duttagupta, S.P. and Fauchet, P.M., “Silicon-based Visible Light- Emitting Devices Integrated Into Microelectronic Circuits,” Nature 384 (1996) 338.10.1038/384338a0Google Scholar
4 Halliday, D.P., Eggleston, J.M., Adams, P.N., Holland, E.R. and Monkman, A.P. “A visible larg area light emitting diode fabricated from porous silicon using a conducting polyaniline contact“Google Scholar
5 Huang, W.N.; Tong, K.Y.; Chan, P.W.“Properties of chemically etched porous polycrystalline silicon deposited by r.f. sputtering“ Electron Devices Meeting, (1996)., IEEE Hong KongGoogle Scholar
6 Han, P.G.; Wong, Hei; Chan, A.H.P. Poon, M.C.“Formation mechanism of light-emitting porous silicon prepared by reactive ions etching“Electron Devices Meeting, 2001. Proceedings. IEEE Hong Kong, Page(s):13–16 Google Scholar
7 Diana, J., Macek, A., Nizˇnˇansky', D.,Neˇmec, I., Vrkoslav, V., Chvojka, T., Jeli'nek, I.; “SEM and HRTEM study of porous silicon–relationship between fabrication, morphology and optical properties” Applied Surface Science 238 (2004) 169–174.10.1016/j.apsusc.2004.05.218Google Scholar
8 Li, L.; Yu, Y.H.; Lin, Z.X.; Wang, X.; Mandel, S.; Sundarvel, B.; Luo, E.Z.; Wilson, I.H.“Microstructure and optical effects of buried nano-cavities formed in silicon by hydrogen ion implantation” Ion Implantation Technology, 2000. Page(s):769–772 Google Scholar