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Fermi Level Stabilization in Semiconductors: Implications for Implant Activation Efficiency
Published online by Cambridge University Press: 26 February 2011
Abstract
We propose the existence of a Fermi level stabilization energy in III-V semiconductors which provides a reference level for the electronic part of defect annihilation energies. It is shown that the position of the stabilization energy with respect to the band edges determines the maximum free carrier concentration which can be obtained through doping. The proposed model accounts for previously unexplained trends in implant activation efficiency in III-V semiconductors.
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- Copyright © Materials Research Society 1988
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