Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-24T05:35:55.041Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferroelectric and Ferromagnetic Properties of BiFeO3 Thin Films Deposited by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Kwi-Young Yun ,
Minoru Noda ,
Masanori Okuyama ,
Hiromasa Saeki  and
Hitoshi Tabata
Kwi-Young Yun
Affiliation:
Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560–8531, Japan
Minoru Noda
Affiliation:
Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560–8531, Japan
Masanori Okuyama
Affiliation:
Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560–8531, Japan
Hiromasa Saeki
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567–0047, Japan
Hitoshi Tabata
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567–0047, Japan
Get access

Abstract

BiFeO3 thin film has been prepared on Pt/TiO2/SiO2/Si substrate at a temperature as low as 450°C by pulsed-laser deposition. The BiFeO3 thin film is perovskite single-phase, while any nonperovskite phase, such as orthorhombic Bi2Fe4O9, is not included. Dielectric constant of the film is 87, dielectric loss is 0.03, and leakage current density is low. The coexistence of ferroelectricity and ferromagnetism has been confirmed by means of the P-E and M-H hysteresis characteristics. The BiFeO3 thin film shows a well-saturated hysteresis loop with twice the remanent polarization 2Pr = 54 μC/cm2 and coercive field 2Ec = 100 kV/cm for a maximum applied electric field of 100 kV/cm, and also shows a saturated weak ferromagnetic hysteresis loop, as well as a small remanent magnetization with 2Mr = 0.6 emu/cm3 and 2 Hc = 200 Oe for a maximum magnetic field of 10 kOe at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.52
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smolenskii, G. A. and Yudin, V. M., Sov. Phys. JETP. 16, 622 (1963).Google Scholar
2. Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehland, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M., and Ramesh, R., Science. 299, 1719 (2003).Google Scholar
3. Hill, N. A. and Rabe, K. A., Phys. Rev. B59, 8759 (1999).Google Scholar
4. Van Hook, H. J., J. Phys. Chem. 68, 3876 (1964).Google Scholar
5. Ismilzade, J. G., Phys. Status. Solidi. B46, K39 (1971).Google Scholar
6. Teague, J. R., Gerson, R., and James, W. J., Solid State Commun. 8, 1073 (1970).Google Scholar
7. Kiselev, S. V., Ozerov, R. P., and Zhdanov, G. S., Sov. Phys. Dokl. 7, 742 (1963).Google Scholar
8. Kubel, F. and Schmid, H., Acta Crystallogr. B46, 698 (1990).Google Scholar
9. Ueda, K., Tabata, H., and Kawai, T., Appl. Phys. Lett. 75, 555 (1999).Google Scholar
10. Cheng, J. R., Li, N., and Cross, E., J. Appl. Phys. 94, 5153 (2003).Google Scholar
11. Yun, K. Y., Noda, M., and Okuyama, M., Appl. Phys Lett. 83, 3981 (2003).Google Scholar
12. Auciello, O. and Ramesh, R., Mater. Res. Bull. 21, 221 (1996).Google Scholar
13. Yun, K. Y., Noda, M., Okuyama, M., Saeki, H., and Tabata, H., J. Appl. Phys. submitted (2003).Google Scholar
14. Mills, P. and Sullivan, J. L., J. Phys. D16, 723 (1983).Google Scholar