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Ferroelectric Domain Boundaries Induced by Interface Mismatch Dislocations in BaTiO3/LaAlO3

Published online by Cambridge University Press:  10 February 2011

Z. L. Wang  and
Z. R. Dai
Z. L. Wang
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology Atlanta, GA 30332–0245.
Z. R. Dai
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, P.O. Box 2724, Beijing 100080, P. R. China.
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Abstract

Interface microstractures of BaTiO3/LaAlO3 grown by metal-organic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation on cooling from the growth temperature. The {100} surfaces of BaTiO3 are terminated with the Ba-O layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 51
Copyright
Copyright © Materials Research Society 1997

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References

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