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Ferroelectric Oxide Single-Crystalline Layers by Wafer Bonding and Hydrogen/Helium Implantation

Published online by Cambridge University Press:  11 February 2011

Ionut Radu ,
Izabela Szafraniak ,
Roland Scholz ,
Marin Alexe  and
Ulrich Gösele
Ionut Radu
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
Izabela Szafraniak
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
Roland Scholz
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
Marin Alexe
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
Ulrich Gösele
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
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Abstract

Layer splitting by helium and/or hydrogen and wafer bonding was applied for the transfer of thin single-crystalline ferroelectric oxide layers onto different substrates. The optimum conditions for achieving blistering/splitting after post-implantation annealing were experimentally obtained for LiNbO3, LaAlO3, SrTiO3 single crystals and transparent PLZT ceramic. Under certain implantation conditions large area exfoliation instead of blistering occurs after annealing of as-implanted oxides. Small area single-crystal oxide layer transfer was successfully achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U11.8
Copyright
Copyright © Materials Research Society 2003

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References

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