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Flame Annealing of Ion Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

J. Narayan  and
R. T. Young
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
R. T. Young
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

We have investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200°C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a “defect-free” annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening,i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formations of 90° dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20–1.25 and low reverse bias currents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 361
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

REFERENCES

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