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Fluorinated Amorphous Carbon Thin Films Grown from C4F8 for Multilevel Interconnections of Integrated Circuits

Published online by Cambridge University Press:  15 February 2011

Kazuhiko Endo ,
Toru Tatsumi ,
Yoshihisa Matsubara  and
Tadahiko Horiuchi
Kazuhiko Endo
Affiliation:
Microelectronics Research Laboratories NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, endo@lbr.cl.nec.co.jp
Toru Tatsumi
Affiliation:
Microelectronics Research Laboratories NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan, endo@lbr.cl.nec.co.jp
Yoshihisa Matsubara
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
Tadahiko Horiuchi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

Fluorinated amorphous carbon thin films (a-C:F) for use as low-dielectric-constant interlayer dielectrics were deposited by helicon-wave plasma-enhanced chemical vapor deposition using fluorocarbon compounds as a source material. The a-C:F films could be grown from C4F8 at a high deposition rate (above 400 nm/min) and they were thermally stable up to 300°C. The addition of bias power to the substrate made it possible to completely fill gaps in the wiring (space 0.35 μm, height 0.65 μm) with the a-C:F film. To protect the a-C:F film during further processing, we deposited a SiO2 film to add mechanical strength and resistance to the oxygen plasma used to remove resist materials. The adhesion between the a-C:F and SiO2 films was dramatically improved by inserting an adhesion promoter consisting of a-C:H and Si-rich SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 165
Copyright
Copyright © Materials Research Society 1997

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