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Fluorine-Silicon Reactions and the Etching of Crystalline Silicon

Published online by Cambridge University Press:  28 February 2011

Chris G. Van De Walle ,
F. R. Mcfeely  and
S. T. Pantelides
Chris G. Van De Walle
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
F. R. Mcfeely
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
S. T. Pantelides
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The interaction between F atoms and crystalline Si, which is essential for etching processes in semiconductor device fabrication, is investigated with state-of-the-art theoretical techniques. The theory is based on the pseudopotential-density-functional method in a supercell geometry. A comprehensive picture of F reactions with the Si surface, the bulk, and the near-surface region is obtained, in terms of which the etching process is elucidated. Insertion of F into Si-Si bonds becomes possible because of relaxed steric constraints in the near-surface region. Dependence of the etch rate on doping follows naturally, in agreement with observations. Similarities and differences between F-Si and H-Si reactions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 141: Symposium T – Atomic Scale Calculations in Materials Science , 1988 , 425
Copyright
Copyright © Materials Research Society 1989

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