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Formation and Binding Energies of Vacancy Clusters in Silicon

Published online by Cambridge University Press:  15 February 2011

L. Colombo ,
A. Bongiorno  and
T. Diaz De La Rubia
L. Colombo
Affiliation:
INFM and Dept. Materials Science, via Emanueli 15, 1–20126 Milano, Italy
A. Bongiorno
Affiliation:
INFM and Dept. Materials Science, via Emanueli 15, 1–20126 Milano, Italy
T. Diaz De La Rubia
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
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Abstract

We critically readdress the problem of vacancy clustering in silicon by perform large-scale tight-binding molecular dynamics simulations. We also compare the results of this quantum-mechanical approach to the widely used model-potential molecular dynamics scheme based on the Tersoff and Stillinger-Weber interatomic potentials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 205
Copyright
Copyright © Materials Research Society 1997

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References

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