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Formation and Passivation of New Paramagnetic Defects Associated With Thermal Oxides On Silicon

Published online by Cambridge University Press:  22 February 2011

Keith L. Brower
Keith L. Brower*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
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Abstract

A new spin resonance spectrum has been observed with electron paramagnetic resonance in thermal oxides grown on (111) silicon. Our analysis indicates that this new spectrum consists of two isotropic resonances. One resonance has a g-value of 2.0026 and a linewidth (FWHM) of 1.2 G (labeled SL8); the other resonance has a g-value of 2.0029 and a linewidth (FWHM) of 5 G (labeled SL9). These spectra might be due to impurity contamination resulting from the oxidation process and associated with defects at interior surfaces. The SL8 resonance in particular appears to be located within the as-grown thermal oxide. The effects of 60Co gamma irradiation and annealing in either hydrogen or ammonia on these spectra are also presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 219
Copyright
Copyright © Materials Research Society 1988

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