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Formation Chemistry of Polycrystalline Cu(InGa)Se2 Thin-Film Absorbers Prepared by Selenization of Cu-Ga/In Stacked Precursor Layers with H2Se Gas

Published online by Cambridge University Press:  10 February 2011

K. Kushiya ,
S. Kuriyagawa ,
T. Kase ,
I. Sugiyama ,
M. Tachiyuki  and
H. Takeshita
K. Kushiya
Affiliation:
Showa Shell Sekiyu K.K., Central R&D Lab. 123-1 Shimo-Kawairi, Atsugi City, Kanagawa Pref. 243-02 Japan
S. Kuriyagawa
Affiliation:
Showa Shell Sekiyu K.K., Central R&D Lab. 123-1 Shimo-Kawairi, Atsugi City, Kanagawa Pref. 243-02 Japan
T. Kase
Affiliation:
Showa Shell Sekiyu K.K., Central R&D Lab. 123-1 Shimo-Kawairi, Atsugi City, Kanagawa Pref. 243-02 Japan
I. Sugiyama
Affiliation:
Showa Shell Sekiyu K.K., Central R&D Lab. 123-1 Shimo-Kawairi, Atsugi City, Kanagawa Pref. 243-02 Japan
M. Tachiyuki
Affiliation:
Showa Shell Sekiyu K.K., Central R&D Lab. 123-1 Shimo-Kawairi, Atsugi City, Kanagawa Pref. 243-02 Japan
H. Takeshita
Affiliation:
Showa Shell Sekiyu K.K., Central R&D Lab. 123-1 Shimo-Kawairi, Atsugi City, Kanagawa Pref. 243-02 Japan
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Abstract

The purpose of this study is to improve the reliability and reproducibility of our fabrication process for polycrystalline Cu(InGa)Se2 (CIGS) thin-film absorbers and to make a better absorber with higher efficiency. The current baseline process of selenization has been evaluated through the investigation of the formation chemistry of the device-quality CIGS thin-film absorbers with a graded band-gap structure. It has been verified that the current selenization process has been performed in a good balancing point with both Cu/III ratio and thickness of the precursor layer and the total amount of Se through H2Se gas incorporated from the surface during the selenization. A simplified model to explain the formation chemistry of the selenization in this study has been proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 177
Copyright
Copyright © Materials Research Society 1996

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References

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