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Formation of Amorphous Interlayers by Solid–State Diffusion in Ti Thin Films on Si–ge Layers on Silicon and Germanium

Published online by Cambridge University Press:  15 February 2011

J.B. Lai ,
C.S. Liu ,
L.J. Chen  and
J.Y. Cheng
J.B. Lai
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
C.S. Liu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
J.Y. Cheng
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A.
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Abstract

The formation of amorphous interlayers (a–interlayers) by solid–state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin film on germanium and Sil-xGex alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy.

Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as–deposited samples. The growth of a–interlayers was found to vary non–monotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with that of the Ti/Si system. The formation mechanism are discussed in terms of thermodynamic and kinetic factors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 47
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Schwary, R.B. and Johnson, W.L., Phys. Rev. Lett. 41, 415 (1983).Google Scholar
2. Johnson, W.L., Prog. Mater. Sci. 30, 81 (1986).Google Scholar
3. Tu, K.N. and Chou, T.C., Phys. Rev. Lett. 61, 1863 (1988).Google Scholar
4. Lur, W. and Chen, L.J., Appl. Phys. Lett. 54, 7219 (1989).Google Scholar
5. Lee, T.L. and Chen, L.J., J. Appl. Phys. 75, 2007 (1994).Google Scholar
6. Chen, L.J., Hsieh, W.Y., Lin, J.H., Lee, T.L., Chen, J.F., Liang, J.M., and Wang, M.H., Mater. Res. Soc. Symp. Proc. 320, 343 (1994).Google Scholar
7. Luryi, S., Kastalsky, A., and Bean, J.C., IEEE Trans. ED 31, 1135 (1986).Google Scholar
8. Heish, Y.F., Chen, L.J., Marshall, E.D., and Lau, S.S., Appl. Phys. Lett. 51, 1588 (1987)Google Scholar
9. Meyerson, B.S., Proc. IEEE 80, 1592 (1992).Google Scholar
10. Wang, Z., Chen, Y.L., Ying, H., Nemanich, R.J., and Sayer, D.E., Mat. Res. Soc. Symp. Proc. 320, 397 (1994).Google Scholar
11. Miedema, A.R., Chatel, P.F. de, and Boer, F.R. de, J. Less-Common Met. 41, 283 (1975).Google Scholar
12. Miedema, A.R., Buslhow, K.H.J., and Mal, H.H. van, J. Less-Common Met. 49, 463 (1976).Google Scholar
13. Darken, L.S. and Gurry, R.W., Physical Chemistry of Metals (McGraw-Hill, New York, 1953).Google Scholar
14. Parrinello, M. and Rahman, A., Phys. Rev. Lett. 45, 1196 (1980).Google Scholar
15. Li, M. and Johnson, W.L., Phys. Rev. Lett. 70, 1120 (1993).Google Scholar
16. Reed-Hill, R.E., Physical Metallurgy Principles, 2nd edition (Van Norstrand, New York, 1973).Google Scholar
17. Kittel, C. Introduction to Solid State Physics, 6th edition (Wiley, New York, 1986.Google Scholar