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Formation of Buried Iridium Silicide Layer in Silicon by High Dose Iridium Ion Implantation

Published online by Cambridge University Press:  21 February 2011

K. M. Yu ,
B. Katz ,
I. C. Wu  and
I. G. Brown
K. M. Yu
Affiliation:
Center for Advanced Materials, Materials and Chemical Sciences Division Lawrence Berkeley Laboratory, Berkeley CA 94720
B. Katz
Affiliation:
Center for Advanced Materials, Materials and Chemical Sciences Division Lawrence Berkeley Laboratory, Berkeley CA 94720
I. C. Wu
Affiliation:
Center for Advanced Materials, Materials and Chemical Sciences Division Lawrence Berkeley Laboratory, Berkeley CA 94720
I. G. Brown
Affiliation:
Center for Advanced Materials, Materials and Chemical Sciences Division Lawrence Berkeley Laboratory, Berkeley CA 94720
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Abstract

We have investigated the formation of IrSi3 layers buried in <111> silicon. The layers are formed by iridium ion implantation using a metal vapor vacuum arc (MEVVA) high current metal ion source at room temperature with average beam energy = 130 keV. Doses of the Ir ions ranging from 2×1016 to 1.5×1017/cm2 were implanted into <111> Si. The formation of IrSi3 phase is realized after annealing at temperatures as low as 500°C. A continuous IrSi3 layer of =200 Å thick buried under =400 Å Si was achieved with samples implanted with doses not less than 3.5×1016/cm2. Implantated doses above 8×1016/cm2 resulted in the formation of an IrSi3 layer on the surface due to excessive sputtering of Si by the TI ions. The effects of implant dose on phase formation, interface morphology and implanted atom redistribution are discussed. Radiation damage and regrowth of Si due to the implantation process was also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 229
Copyright
Copyright © Materials Research Society 1989

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