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Formation of Cosi2-Shallow Junctions By Ion Beam Mixing and Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

L. Niewöhner  and
D. Depta
L. Niewöhner
Affiliation:
Institut för Halbleitertechnologie, Universität Hannover, Appelstr. 11A D-3000 Hannover 1, Federal Republic of Germany
D. Depta
Affiliation:
Institut för Halbleitertechnologie, Universität Hannover, Appelstr. 11A D-3000 Hannover 1, Federal Republic of Germany
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Abstract

Formation of CoSi2 using the technique of ion implantation through metal (ITM) and subsequent appropriate rapid thermal annealing is described. Silicide morphology is investigated by SEM and TEM. SIMS and RBS are used to determine dopant distribution and junction depth. Self-aligned CoSi2/n+p diodes produced in this technique are presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 503
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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