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Formation of PtSi Using Polycrystalline Si and Different Annealing Sequences

Published online by Cambridge University Press:  22 February 2011

Chin-An Chang  and
Armin Segmüller
Chin-An Chang
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
Armin Segmüller
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598
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Abstract

Formation of PtSi on As-doped polycrystalline Si is studied using different annealing sequences. An incomplete reaction between the Pt and Si is observed using a one-temperature anneal at 550 ° C, with unreacted Pt remaining in the film which is undesirable for the device processing. Using a three-temperature annealing sequence at 200–300–550 ° C in a N2-H2 mixture, a complete reaction is observed between Pt and Si, with no unreacted Pt detected. The results are similar to that using single crystal Si, except for the less-oriented PtSi formed. The three-temperature annealing process described has thus been shown useful to the fabrication of PtSi contacts at device areas containing either single crystalline or polycrystalline Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 175
Copyright
Copyright © Materials Research Society 1988

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References

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