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Formation Of Stable Point Defects in Ion-Implanted Si

Published online by Cambridge University Press:  28 February 2011

R. J. Culbertson  and
S. J. Pennycook
R. J. Culbertson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Double doping of Si by ion implantation of both group V and group III dopants was studied. For the case of Sb as the group V dopant, both Sb and B could be maintained in solution after high temperature heat treatment at concentrations greatly exceeding their solubility limits. With Sb implantation alone, Sb diffusion takes place with a highly enhanced transient diffusion, followed by nucleation of self interstitials into loops at the projected range. In certain double-doped samples this projected range damage was eliminated. In the under-compensated B-Sb case, evidence of stable Sb-B pairs was obtained.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 391
Copyright
Copyright © Materials Research Society 1987

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References

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