Hostname: page-component-77c89778f8-sh8wx Total loading time: 0 Render date: 2024-07-17T10:33:59.775Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Titanium Disilicide by Electron Beam Irradiation Under Non Steady State Conditions

Published online by Cambridge University Press:  22 February 2011

E A Maydell-Ondrusz ,
R E Harper ,
A Abid ,
P L F Hemment  and
K G Stephens
E A Maydell-Ondrusz
Affiliation:
University of Surrey, Guildford, Surrey, U.K.
R E Harper
Affiliation:
University of Surrey, Guildford, Surrey, U.K.
A Abid
Affiliation:
University of Surrey, Guildford, Surrey, U.K.
P L F Hemment
Affiliation:
University of Surrey, Guildford, Surrey, U.K.
K G Stephens
Affiliation:
University of Surrey, Guildford, Surrey, U.K.
Get access

Abstract

Titanium disilicide was formed by multiply-scanned electron beam irradiation of titanium films of nominal thickness 1200Å on silicon substrates. Samples were annealed at power densities of 2 to 52.5Wcm−2 using times in the range of 1 to a few hundreds seconds. Rutherford backscattering analysis was used to study the metal redistribution and to estimate the approximate compositions and thicknesses of the films. Compounds were identified by X-ray and electron diffraction. Sheet resistance was measured by the four probe technique and surface topography inspected by scanning electron microscopy.

The silicide thickness achieved depends only on annealing time for power densities in the range of 20 to 50Wcm−2 and hence is independent of heating rate and peak temperature during the heating cycle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 99
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Proc. of Ist Int. Symp. on VLSI Science and Technology Detroit 1982, d'Heurle, , p. 194.Google Scholar
2. Krautle, H, Chu, W K, Nicolet, M A, Mayer, J W and Tu, N K, Proc. of Int.Conf. on Application of Ion Beams to Metals Albuquerque 1973, p. 193.Google Scholar
3. Kato, K and Nakamura, Y, Thin Solid Films 34, 135, 1976.Google Scholar
4. Guldan, A, Schiller, V, Steffen, A and Balk, P, Thin Solid Films 100, 1, 1983.Google Scholar
5. Pinizzotto, R F, Wang, K L and Matteson, S, Proc. of the 4th Int. Symp. on Silicon Material Science and Technology, Electrochem. Soc. 811–5Google Scholar
6. Murarka, S P and Fraser, D B, J Appl. Phys. 51, 350, 1980.Google Scholar
7. Bentini, G G, Servidori, M, Cohen, G, Nipotti, R and Drigo, A V, J. Appl. Phys. 53 1525, 1982.Google Scholar
8. Maydell-Ondrusz, E A, Hemment, P L F and Stephens, K G, to be published.Google Scholar
9. Majni, G, Nava, F Ottaviani, G, Luches, A, Nassisi, V and Calotti, G,Vacuum, 32, 11, 1982.CrossRefGoogle Scholar
10. Revesz, P, Gyimesi, J, Pogany, L and Peto, G, J Appl. Phys. 54, 2114, 1983.Google Scholar
11. Chu, W K, Lau, S S, Mayer, J W, Muller, H and Tu, N K, Thin Solid Films 25, 393, 1075.CrossRefGoogle Scholar
12. Lintech Inst. Co., Cambridge.Google Scholar
13. Osburn, C, Tsai, M Y, Roberts, S, Lucchese, C J and Ting, C Y in 1, p. 221.Google Scholar
14. “Helium Stopping Powers and Ranges in all Elements”, Vol. 4 of The Stopping and Ranges of Ions in Matter, Ed. by Ziegler, J F, Pergamon Press, N.Y., 1977.Google Scholar
15. Santry, D C and Werner, R D, Nucl. Instr. Meth. 178, 523, 1980.Google Scholar
16. Scovell, P D, private communication.Google Scholar
17. Kaye, G W C and Laby, T H, Tables of Physical and Chemical Constants, Longmans, Green & Co., Ltd. 1959.Google Scholar
18. Wolf, H, “Semiconductors”, Wiley-Interscience, 1971, p. 85.Google Scholar
19. Wolf, H, “Semiconductors”, Wiley-Interscience, 1971, p. 85.Google Scholar
20. “Silicides for VLSI Formation”, Ed. Murarka, S.P, Academic Press 1983Google Scholar