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Front-End Integration Effects on Gate Oxide Quality

Published online by Cambridge University Press:  15 February 2011

F. Lin ,
S. A. Ajuria ,
V. Ilderem  and
M. P. Masquelier
F. Lin
Affiliation:
Advanced Custom Technologies, Motorola, Inc., 2200 W. Broadway Rd., Mesa, AZ 85202
S. A. Ajuria
Affiliation:
Semiconductor Technologies Laboratory, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
V. Ilderem
Affiliation:
Advanced Custom Technologies, Motorola, Inc., 2200 W. Broadway Rd., Mesa, AZ 85202
M. P. Masquelier
Affiliation:
Advanced Custom Technologies, Motorola, Inc., 2200 W. Broadway Rd., Mesa, AZ 85202
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Abstract

In this paper, the impact of several front-end processing steps (up to gate oxidation) on gate oxide integrity (GOI) is evaluated. In PBL isolation processing, the use of as-deposited amorphous silicon (a-Si), subsequently annealed during nitride deposition, results in better structural and electrical properties compared to as-deposited polysilicon or as-deposited a-Si with an extra anneal step prior to nitride deposition. Thicker or dual sacrificial schemes exhibit improved gate oxide low voltage breakdown and charge-to-breakdown. Dilute RCA chemistries during pre-gate cleaning produce equal or better surfaces for gate oxidation than the conventional non-dilute RCA with less chemical usage. As gate oxides are scaled below 100Å, lowering gate oxidation temperature is proven to result in far better gate oxide quality than maintaining process temperatures at or above 900°C and diluting oxygen in either argon or nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

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