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The Future Of Silicide For CMOS Contacts

Published online by Cambridge University Press:  10 February 2011

R. A. Roy ,
C. Cabral Jr  and
C. Lavoie
R. A. Roy
Affiliation:
IBM Research Division P.O. Box 218 Yorktown Heights NY 10598
C. Cabral Jr
Affiliation:
IBM Research Division P.O. Box 218 Yorktown Heights NY 10598
C. Lavoie
Affiliation:
IBM Research Division P.O. Box 218 Yorktown Heights NY 10598
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Abstract

This paper examines the challenges for silicide contacts in current and future CMOS technologies and assesses the capability of TiSi2 and related materials, as well as CoSi2, to meet the technology requirements. Specific issues such as maintaining low resistance in narrow lines, source/drain silicon consumption, and silicide thermal budget, are discussed. In this regard we evaluate the salient features of the basic titanium salicide process, and variations such as alloying, implantation, selective CVD, and laser silicidation. Data are presented from recent experiments to assess progress in each approach towards meeting the necessary goals. Finally, projections of the future of silicide processing are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 35
Copyright
Copyright © Materials Research Society 1999

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References

1. Cabral, C., Jr., Clevenger, L. A., Harper, J. M. E., d'Heurle, F. M., Roy, R. A., Lavoie, C., Saenger, K. L., Miles, G. L., Mann, R.W., and Nakos, J. S., Appl. Phys. Lett. 71, 3531, (1997).10.1063/1.120401Google Scholar
2. Deura, M., Nara, Y., Yamazaki, T., Gotoh, T., Ohtake, F., Kurata, H., and Sugii, T., Electron. Commun. Jpn. 2, Electron. (USA) 79, 1 (1996).10.1002/ecjb.4420791101Google Scholar
3. Berger, H. H., Solid State Electron. 15, 145 (1972).10.1016/0038-1101(72)90048-2Google Scholar
4. Taur, Y., Ning, T. H., Mat. Chem Phys. 52, 191 (1998).10.1016/S0254-0584(97)02029-4Google Scholar
5. Semiconductor Industry Association (1997).Google Scholar
6. Lasky, J., Nakos, J., Cain, O., and Geiss, P., IEEE Trans. Electron Dev. ED–38, 2629 (1991).Google Scholar
7. Ishida, K., Wakabayashi, H., Mogami, T., Mat. Res. Soc. Proc. 514, 207 (1998).10.1557/PROC-514-207Google Scholar
8. Mouroux, A., Zhang, S. L., Kaplan, W., Nygren, S., Ostling, M., and Petersson, C. S., Appl. Phys. Lett. 69, 975 (1996).Google Scholar
9. Kittl, J., Gribelyuk, M., Samavedam, S. B., Hong, Q. Z., Yu, N., and Rodder, M., Mat. Res. Soc. Symp. Proc. 514, 201 (1998).10.1557/PROC-514-201Google Scholar
10. Nakamura, T., Ikeda, K., Tomita, H., Koyima, S., and Nakajima, K., Mat. Res. Soc. Symp. Proc. 514, 213 (1998).10.1557/PROC-514-213Google Scholar
11. Ma, Z. and Allen, L. H., Phys. Rev. B49, 13501 (1994).10.1103/PhysRevB.49.13501Google Scholar
12. Roy, R. A., presented Soc Symp. Spring 1996(San Francisco Ca., April, 1996).Google Scholar
13. Miles, G.L, Mann, R.W, Bertsch, J.E., Thin Sol. Films 290–291, 469 (1996).10.1016/S0040-6090(96)09023-2Google Scholar
14. Mercier, J., Regolini, J. L., and Bensahel, D., J. Electron. Mater. 19 253 (1990).10.1007/BF02733815Google Scholar
15. Fang, H., Ozturk, M. C., and Seebauer, E. G., Mat. Res. Soc. Symp. Proc. 515, 231 (1998).10.1557/PROC-514-231Google Scholar
16. Roy, R. A., Cabral, C., Jr., Lavoie, C., Jordan-Sweet, J., Viswanathan, R., Ozturk, M. C., Fang, H., Swenberg, J., Achutharaman, R., Mat. Res. Soc. Symp. Proc. 514, 439 (1998).10.1557/PROC-514-439Google Scholar
17. Roy, R. A., Presented at MRS Spring Meeting, Symposium on Interconnects, San Francisco, Ca., April 15, 1998.Google Scholar
18. Roy, R. A., Talwar, S., Wang, Y., private communication.Google Scholar
19. Shamma, N., Talwar, S., Verma, G., Kramer, K- J., Farrar, N., Chi, C., Greene, W., Weiner, K., Mat. Res. Soc. Symp. Proc, 470, 265 (1997).10.1557/PROC-470-265Google Scholar
20. Lin, X. W., Ibrahim, N., and Pramanik, D., Mat. Res. Soc. Symp. Proc. 514, 179 (1998).10.1557/PROC-514-179Google Scholar
21. Nakahara, Y., Takeuchi, K., Tatsumi, T., Ochai, Y., Manako, S., Samukawa, S., and Furukawa, A., VLSI Tech. Dig., 174 (1996).Google Scholar
22. Wang, Z., Aldrich, D. B., Chen, Y. L., Sayers, D. E., Nemanich, R. J., Thin Sol. Film. 270, 555 (1995).10.1016/0040-6090(95)06841-4Google Scholar