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GaAs Devices for Low Loss Power Rectification
Published online by Cambridge University Press: 25 February 2011
Abstract
High voltage GaAs Schottky rectifiers fabricated using vapor phase epitaxy have been observed to be an order of magnitude higher in switching speeds than silicon. Measured rectifier barrier heights deduced from the I-V and C-V plots were found to be in good agreement with previously reported values. Our experimental results show no correlation between the epilayer thickness and barrier height.
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- Copyright © Materials Research Society 1993
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