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GaAs Solar Cell Using an Alternate Arsenic Source

Published online by Cambridge University Press:  28 February 2011

V. S. Sundaram ,
J. E. Avery ,
G. R. Girard ,
H. E. Hager ,
A. G. Thompson  and
L. M. Fraas
V. S. Sundaram
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
J. E. Avery
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
G. R. Girard
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
H. E. Hager
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
A. G. Thompson
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
L. M. Fraas
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
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Abstract

Using an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 211
Copyright
Copyright © Materials Research Society 1989

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References

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