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GaN: From Selective Area to Epitaxial Lateral Overgrowth
Published online by Cambridge University Press: 15 February 2011
Abstract
The evolution of the topography of GaN stripes as a function of stripe width (2 - 120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.
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- Copyright © Materials Research Society 1999