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Gan Nanotubes

Published online by Cambridge University Press:  15 February 2011

Seung Mi Lee ,
Young Hee Lee ,
Yong Gyoo Hwang ,
J. Eisner ,
Dirk Porezag  and
Thomas Frauenheim
Seung Mi Lee
Affiliation:
Department of Semiconductor Science and Technology, Jeonbuk National University, Jeonju 561-756, Korea
Young Hee Lee*
Affiliation:
Department of Semiconductor Science and Technology, Jeonbuk National University, Jeonju 561-756, Korea Dept, of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, leeyh@sprc2.chonbuk.ac.kr
Yong Gyoo Hwang
Affiliation:
Dept. of Physics, Wonkwang University, Iksan 570-749, Korea
J. Eisner
Affiliation:
Universitaet-GH Paderborn, Fachbereich Physik, Theoretische Physik, 33095 Paderborn, Germany
Dirk Porezag
Affiliation:
Code 6690, Complex Systems Theory Branch, Naval Research Laboratory, Washington, D.C. 20375-5320, USA
Thomas Frauenheim
Affiliation:
Universitaet-GH Paderborn, Fachbereich Physik, Theoretische Physik, 33095 Paderborn, Germany
*
To whom correspondence should be addressed
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Abstract

We perform parametrized density-functional calculations to predict the stability and formation mechanism of GaN nanotubes. Strain energies of GaN nanotubes are comparable to those of carbon nanotubes, suggesting the possibility for the formation of GaN nanotubes. We note that an intermediate phase with [4,6,10] polygons exist at armchair tube edge, which may play as a nucleation seed of further tube growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.3
Copyright
Copyright © Materials Research Society 1999

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