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GaN Room Temperature exciton Spectra by Photovoltaic Measurement

Published online by Cambridge University Press:  10 February 2011

W. Liu ,
M. F. Li ,
S. J. Chua ,
Y. H. Zhang  and
K. Uchida
W. Liu
Affiliation:
Center for optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260
M. F. Li
Affiliation:
Center for optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260
S. J. Chua
Affiliation:
Center for optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260
Y. H. Zhang
Affiliation:
Institute of Microelectronics, National University of Singapore, Singapore 119260
K. Uchida
Affiliation:
Nippon Sanso. Co. Tsukuba, Lab, 10 Ohkubo Tsukuba, Ibaraki 300–26, Japan
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Abstract

Exciton absorption peak has been clearly observed at room temperature by photovoltaic spectra, on a GaN layer grown on (0001)-plane Sapphire by metalorganic chemical vapor deposition. From the spectra, we obtained A and B exciton transition energies to be 3.401 eV, 3.408 eV, and the energy gap to be 3.426 eV in wurztite GaN, respectively. We have also performed photovoltaic measurements with various incidence angles of light, and observed the polarization behavior of exciton absorption in GaN. Finally, we used UV-polarizer to further confirm the polarization properties of GaN. In conjuction with previous room temperature photoreflectance measurements, this work provide direct and reliable assessment of the excitonic properties and crystal quality of GaN semiconductor layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 593
Copyright
Copyright © Materials Research Society 1998

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