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Gas Phase and Surface Reactions of Organometallic Arsenic Sources

Published online by Cambridge University Press:  28 February 2011

T.R. Omstead ,
S. Brandon ,
M. Hoveland ,
K.F. Jensen ,
D.A. Bohling  and
G.T. Muhr
T.R. Omstead
Affiliation:
Department of Chemical Engineering and Materials ScienceUniversity of Minnesota Minneapolis, MN 55455
S. Brandon
Affiliation:
Department of Chemical Engineering and Materials ScienceUniversity of Minnesota Minneapolis, MN 55455
M. Hoveland
Affiliation:
Department of Chemical Engineering and Materials ScienceUniversity of Minnesota Minneapolis, MN 55455
K.F. Jensen
Affiliation:
Department of Chemical Engineering and Materials ScienceUniversity of Minnesota Minneapolis, MN 55455
D.A. Bohling
Affiliation:
Air Products and Chemicals P.O. Box 538 Allentown, PA 18105
G.T. Muhr
Affiliation:
Air Products and Chemicals P.O. Box 538 Allentown, PA 18105
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Abstract

The chemical kinetics of two new organometallic arsenic substitutes, tris-trifluoromethylarsenic (As(CF3)3) and phenylarsine (PhAsH2), for use in the MOCVD of GaAs have been characterized through the use of microbalance gravimetry and molecular beam mass spectrometry. Both growth rate and gas-phase cracking studies demonstrate that phenylarsine interacts only slightly with the common gallium precursors, which may make it a useful alternative to arsine. Growth with tris-trifluoromethylarsenic is achieved only at low V/III ratios and with pressures above 250 Torr. The compound etches GaAs under most conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 181
Copyright
Copyright © Materials Research Society 1989

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References

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