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Gas-Phase and Surface Decomposition of Tris-Dimethylamino Arsenic

Published online by Cambridge University Press:  22 February 2011

Ming Xi ,
Sateria Salim ,
Klavs F. Jensen  and
David A. Bohling
Ming Xi
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Sateria Salim
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
David A. Bohling
Affiliation:
Air Products and Chemicals, Allentown, PA 18195
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Abstract

Gas phase and surface decomposition reactions of a novel arsenic precursor tris- (dimethylamino) arsenic (DMAAs) have been studied. Optical fiber-based Fourier transform infrared spectroscopy was used to monitor, in situ, the gas-phase pyrolysis of DMAAs. Homolysis of the arsenic-nitrogen bond with formation of dimethylamine radicals was identified as the key gas-phase reaction pathway. Formation of methylmethyleneimine from reactions with the decomposition products was directly observed. Surface decomposition of DMAAs on GaAs(100) was investigated by low energy electron diffraction and temperature-programmed reaction under ultra-high vacuum conditions. DMAAs adsorbed onto GaAs(100)-(4x6) was found to decompose with 100% efficiency and two surface reaction pathways were identified. The first reaction channel was homolysis of the arsenic-nitrogen bond with formation of dimethylamine radicals, whereas the second pathway involved a β-hydrogen transfer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 169
Copyright
Copyright © Materials Research Society 1994

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References

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