No CrossRef data available.
Article contents
Ge Heteroepitaxy on (100) Si Substrates by Ion Assisted Deposition
Published online by Cambridge University Press: 25 February 2011
Abstract
Ge films have been grown by ion-assisted deposition on Si(100) substrates. Initial studies were conducted to determine the growth and morphology of Ge using a modified crucible arrangement and ionization chamber. It was observed that a narrow substrate temperature range existed for the deposition of smooth Ge films without ion assistance. Ionization and acceleration appear to induce additional damage to the film without improving crystalline quality.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1989