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A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces.
Published online by Cambridge University Press: 22 February 2011
Abstract
Observations of antiphase disorder obtained using a new technique of transmission electron microscopy, in (100) epitaxial layers of GaAs:Ge produced by MBE are presented. The crystallographic origin of this type of disorder is analysed using a recently developed approach. It is shown that antiphase disorder can exist in epitaxial layers where the substrate orientation is of the form {hko}this is consistent with experimental observations that disorder is observed on (100) and (110) substrates, but not on (111) or (211), for example. Antiphase boundaries in {hko} specimens are shown to separate interfacial domains which are energetically degenerate and related by symmetry operations.
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- Copyright © Materials Research Society 1984
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