Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-21T06:25:46.312Z Has data issue: false hasContentIssue false

Geometric Characterization of Electromigration Voids

Published online by Cambridge University Press:  22 February 2011

Yolanda J. Kime
Affiliation:
State University of New York at Cortland, Physics Department, Cortland, NY 13045
Peter Grach
Affiliation:
State University of New York at Cortland, Physics Department, Cortland, NY 13045
Get access

Abstract

The areas, perimeters, lengths, and widths of 998 electromigration induced voids on 38 test stripes have been measured by SEM and digital image analysis. Virtually all of the voids occurred along the passivation-conductor interface on the side of the stripe. Plots of number of voids or total void area versus time to failure do not extrapolate to zero voids at zero time to failure which suggests there is a certain number of active nucleation sites predisposed to voiding.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wang, J.S., Stephens, J.J., and Nix, W.D., Acta metall. 33, 1009 (1985)Google Scholar
[2] Nandedkar, A.S. and Srinivasan, G.R., Mat. Res. Soc. Symp. Proc. Fall (1991)Google Scholar
[3] Kraft, K.O., Bader, S., Sanchez, J.E. Jr, and Arzt, E., Mat. Res. Soc. Symp. Proc. 309, 199 (1993)Google Scholar
[4] Ek, J. van and Lodder, A., J. Phys.: Condensed Matter, 3, 7307 (1991)Google Scholar
[5] Lloyd, J.R., SPIE, 1596, 106 (1991)Google Scholar
[6] Schoen, J.M., J. Appl. Phys., 51, 513 (1980)Google Scholar
[7] Towner, J.M., Proc. 1990 Int'l. Reliability Physics Symp. IEEE, 100 (1990)Google Scholar
[8] Cocks, A.C.F., Acta metall., 33,129 (1985)Google Scholar
[9] Harrison, J.W., IEEE Trans. E. Devices, 35, 2170 (1988)Google Scholar
[10] Attardo, M.J., Rutledge, R., and Jack, R.C., J. Appl. Phys, 42, 4343 (1971)Google Scholar
[11] LaCombe, D.J. and Parks, E.L., Proc. IEEE/IRPS, 1 (1986)Google Scholar
[12] Levi, M.W., Mattila, J. B., Proc. 10th Int'l. VLSI -Multi. Intercon. Conf. (San Jose, CA) (1993)Google Scholar
[13] Siano, D.B., J. Chem. Education, 49, 755 (1972)Google Scholar
[14] Mattila, J.B., Levi, M.W., and Walsh, L.H., Proc. Ninth Int'l. VLSI-VMI Conf. (San Jose, CA) (1993)Google Scholar