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GeTe-filled Carbon Nanotubes for Data Storage Applications

Published online by Cambridge University Press:  01 February 2011

Cristina E. Giusca ,
Vlad Stolojan ,
Jeremy Sloan ,
Hidetsugu Shiozawa  and
Ravi Silva
Cristina E. Giusca
Affiliation:
c.giusca@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, United Kingdom
Vlad Stolojan
Affiliation:
v.stolojan@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, United Kingdom
Jeremy Sloan
Affiliation:
j.sloan@warwick.ac.uk, University of Warwick, Department of Physics, Coventry, United Kingdom
Hidetsugu Shiozawa
Affiliation:
h.shiozawa@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, United Kingdom
Ravi Silva
Affiliation:
s.silva@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, United Kingdom
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Abstract

By virtue of their unique electronic properties, nanometer-diameter sized single-walled carbon nanotubes represent ideal candidates to function as active parts of nanoelectronic memory storage devices. We show for the first time that GeTe, a phase change material, currently considered to be one of the most promising materials for data-storage applications, can efficiently be encapsulated within single-walled carbon nanontubes of 1.4 nm diameter. Structural investigations on the encapsulated GeTe nanowires have been carried out by high resolution transmission electron microscopy. The electronic interactions between the filling material and the host nanotube have been examined using ultraviolet photoelectron spectroscopy experiments and show that the electronic structure of the encapsulating nanotube and that of the encased filling are not perturbed by the presence of each of the other component.

The newly formed hybrids offer potential to operate as active elements in non-volatile electronic memory storage devices.

Keywords

memoryelectronic structurescanning transmission electron microscopy (STEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H06-03
Copyright
Copyright © Materials Research Society 2010

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