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GexSi1−x/Si Heterostructures: Physics and Device Applications

Published online by Cambridge University Press:  28 February 2011

John C. Bean
John C. Bean*
Affiliation:
AT&T Bell LaboratoriesMurray Hill, New Jersey 07974
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Abstract

Work on GexSi1−x strained layer epitaxy is reviewed including: The limits of single layer and superlattice growth, and comparison with theory; Physical properties including bandgap and heterostructure band alignment; Work on non-random alloys; Device applications including MODFET's, PIN and APD photodetectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 269
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Gonda, S., Matsushima, Y., Mukai, S., Makita, Y. and Igarashi, O., Jpn. J. Appl. Phys. 17, 1043 (1978).Google Scholar
[2] Kawanami, H., Sakamoto, T., Takahashi, T., Suzuki, E., and Nagai, K., Jpn. J. Appl. Phys. 21, L68 (1982).Google Scholar
[3] Kroemer, H., Polasko, K. J., and Wright, S. C., Appl. Phys. Lett. 36, 763 (1980).Google Scholar
[4] Wright, S. L., Inada, M. and Kroemer, H., J. Vac. Sci. Technol. 21, 534 (1982).Google Scholar
[5] Wright, S. L., Kroemer, H. and Inada, M., J. Appl. Phys. 55, 2916 (1984).Google Scholar
[6] Wright, S. L. and Kroemer, H., Appl. Phys. Lett. 36, 210 (1980).Google Scholar
[7] de Jong, T., Douma, W. A. S., van der Veen, J. F. and Saris, F. W., Appl. Phys. Lett. 42, 1037 (1983).Google Scholar
[8] de Jong, T., Saris, F. W., Tamminga, Y. and Haisma, J., Appl. Phys. lett. 44, 445 (1984).Google Scholar
[9] de Jong, T., Ph.D. Thesis, FOM Institute for Atomic and Molecular Physics, Kruislaan 407, Amsterdam, The Netherlands.Google Scholar
[10] Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T. and Lynch, R. T., Appl. Phys. Lett. 44, 102 (1984).Google Scholar
[11] Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S. and Robinson, I. K., J. Vac. Sci.Technol. A 2, 436 (1984)Google Scholar
[12] Fiory, A. T., Bean, J. C., Feldman, L. C. and Robinson, I. K., J. Appl. Phys. 56, 1227 (1984).Google Scholar
[13] U.S. Patent 4,529,455.Google Scholar
[14] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A198, 205 (1949).Google Scholar
[15] Frank, F. C. and van der Merwe, J. H., Proc. Roy. Soc. A198, 216 (1949).Google Scholar
[16] Frank, F. C. and van der Merwe, J. H., Proc. Roy, Soc. A200, 125 (1949).Google Scholar
[17] van der Merwe, J. H., Proc. Phys. Soc. (London) A63, 616 (1950).Google Scholar
[18] For an introduction to the field see Matthews, J. W., J. Vac. Sci. Technol. 12, 126 (1975).Google Scholar
[19] For an overview of the field see articles in Epitaxial Growth, Matthews, J. W. Ed., Academic Press, New York (1975).Google Scholar
[20] Kasper, E., Herzog, H. J. and Kibbel, H., Appl. Phys. 8, 199 (1975).Google Scholar
[21] Kasper, E. and Herzog, H. J., Thin Sol. Films 44, 357 (1977).Google Scholar
[22] Kasper, E. and Pabst, W., Thin Solid Films 37, L5 (1976).Google Scholar
[23] First presented at the 1982 Electronic Materials Conference, Fort Collins, Colo. and published in Manasevit, M. M., Gergis, I. S., and Jones, A. B., Appl. Phys. Lett. 41, 464 (1982).Google Scholar
[24] Fiory, A. T., Bean, J. C., Hull, R. and Nakahara, S., Phys. Rev. B31, 4063 (1985).Google Scholar
[25] Bean, J. C., Fiory, A. T., Hull, R. and Lynch, R. T., p. 385, Proc. 1st Int. Symp. on Si MBE, Bean, J. C. Ed., Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[26] People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985).Google Scholar
[27] Grabow, M. H. and Gilmer, G. H., in “Semiconductor Heterostructures,” Green, M. L., Baglin, J. E. E., Chin, G. Y., Deckman, H. W., Mayo, W. and Narasinham, D., Eds., Metallurgical Soc., Warrendale, PA, 3 (1986).Google Scholar
[28] Dodson, B. W. and Taylor, P. A., Appl. Phys. Lett. 49, 642 (1986).Google Scholar
[29] Jorke, H., Herzog, H. J., Kasper, E. and Kibbel, H., J. Cryst. Growth 81, 428 (1987).Google Scholar
[30] Houghton, D. C., Lockwood, D. J., Dharma-Wardana, M. W. C., Fenton, E. W., Baribeau, J. M. and Denhoff, M. W., J. Cryst. Growth 81, 434 (1987).Google Scholar
[31] Hull, R., Bean, J. C., Fiory, A. T., Gibson, J. M. and Hartsough, N. E., p. 376, Proc. 1st Int. Symp. on Si MBE, Bean, J. C. Ed., Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[32] Hull, R., Bean, J. C., Cerdeira, F., Fiory, A. T. and Gibson, J. M., Appl. Phys. Lett. 48, 56 (1986).Google Scholar
[33] Braunstein, R., Moore, A. R. and Herman, R., Phys. Rev. 109, 694 (1958).Google Scholar
[34] Kline, J. S., Pollack, F. H. and Cardona, M., Helv-Phys. Acta 41, 968 (1968).Google Scholar
[35] Kleiner, W. H. and Roth, L. M., Phys. Rev. Lett. 2, 334 (1959).Google Scholar
[36] People, R., Phys. Rev. B32, 1405 (1985).Google Scholar
[37] Lang, D. V., People, R., Bean, J. C. and Sergent, A. M., Appl. Phys. Lett. 47, 1333 (1985).Google Scholar
[38] Lang, D. V., People, R., Bean, J. C. and Sergent, A. M., p. 359, Layered Structures and Epitaxy, Gibson, J. M., Osbourn, G. C. and Tromp, R. M., Eds., Vol. 56, Mat. Res. Soc., Pittsburgh, PA (1986).Google Scholar
[39] Harrison, W. A., J. Vac. Sci. Technol. 14, 1016 (1977).Google Scholar
[40] Katnani, A. D., Stoffel, N. G., Daniels, D. R., Zhao, Te-Yiu and Margaritondo, G., J. Vac. Sci. Technol. A1, 692 (1983).Google Scholar
[41] Maenpaa, M., Kuech, T. F. and Nicolet, M. -A., Lau, S. S. and Sadana, D. K., J. Appl. Phys. 53, 1076 (1982).Google Scholar
[42] People, R., Bean, J. C., Lang, D. V., Sergent, A. M., Stormer, H. L., Wecht, K. W., Lynch, R. T. and Baldwin, K., Appl. Phys. Lett. 45, 1231 (1984).Google Scholar
[43] People, R., Bean, J. C. and Lang, D. V., J. Vac. Sci. Technol. A3, 846 (1985).Google Scholar
[44] People, R., Bean, J. C. and Lang, D. V., p. 360, Proc. 1st Int. Symp. on Si MBE, Bean, J. C. Ed., Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[45] Jorke, H. and Herzog, H. -J., p. 352, Proc. 1st Int. Symp. on Si MBE.Google Scholar
[46] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H. and Herzog, H. -J., Phys. Rev. Lett. 54, 2441 (1985).Google Scholar
[47] People, R. and Bean, J. C., Appl. Phys. Lett. 48, 538 (1986).Google Scholar
[48] People, R., Bean, J. C. and Lang, D. V., p. 767, Proc. 18th Int. Conf. On The Physics of Semiconductors, Stockholm (1986), World Scientific, Singapore (1987).Google Scholar
[49] Ourmazd, A. and Bean, J. C., Phys. Rev. B55, 765 (1985).Google Scholar
[50] Ourmazd, A. and Bean, J. C., p. 377, Layered Structures and Epitaxy, Gibson, J. M., Osbourn, G. C. and Tromp, R. M., Eds., Vol. 56, Mat. Res. Soc., Pittsburgh, PA (1986).Google Scholar
[51] Lowe, W. and Bean, J. C., Amer. Phys. Soc. Mtg., Las Vegas, March, 1986.Google Scholar
[52] Xie, Y. H., People, R., Bean, J. C. and Wecht, K. W., Appl. Phys. Lett. 49, 283 (1986).Google Scholar
[53] Xie, Y. H., People, R., Bean, J. C. and Wecht, K. W., J. Vac. Sci. Technol., to be published.Google Scholar
[54] Lockwood, D. J., Rajan, K., Fenton, E. W., Barbeau, J. M. and Denhoff, M. W., Sol. St. Comm. 61, 465 (1987).Google Scholar
[55] Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A. and Ourmazd, A., Appl. Phys. Lett. 49, 286 (1986).Google Scholar
[56] Bevk, J., Mannaerts, J. P., Feldman, L. C., Davidson, B. A., Lowe, W. P., Glass, A. M., Pearsall, T. P., Menendez, J., Pinczuk, A. and Ourmazd, A., p. 189, Heteroepitaxy on Silicon, Fan, J. C. C. and Poate, J. M., Mat. Res. Soc., Pittsburgh, PA, (1986).Google Scholar
[57] Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M., Mannaerts, J. P. and Ourmazd, A., Phys. Rev. Lett. 58, 729 (1987).Google Scholar
[58] Bevk, J., Ourmazd, A., Feldman, L. C., Pearsall, T. P., Bonar, J. M., Davidson, B. A. and Mannaerts, J. P., Appl. Phys. Lett. 50, 760 (1987).Google Scholar
[59] Pearsall, T. P., Bean, J. C., People, R. and Fiory, A. T., p. 402, Proc. 1st Int. Symp. on Si MBE, Bean, J. C. Ed., Electrochemical Soc., Pennington, NJ (1985).Google Scholar
[60] Pearsall, T. P. and Bean, J. C., IEEE Elec. Dev. Lett., EDL–7, 308 (1986).Google Scholar
[61] Daembkes, H., Herzog, H. -J., Jorke, H., Kibbel, H. and Kasper, E., IEEE Trans. on Elec. Dev. ED–33, 633 (1986).Google Scholar
[62] Temkin, H., Pearsall, T. P., Bean, J. C., Logan, R. A. and Luryi, S., Appl. Phys. Lett. 48, 963 (1986).Google Scholar
[63] Luryi, S., Pearsall, T. P., Temkin, H. and Bean, J. C., Elec. Dev. Lett. EDL–7, 104 (1986).Google Scholar
[64] Pearsall, T. P., Temkin, H., Bean, J. C. and Luryi, S., IEEE Elec. Dev. Lett. EDL–7, 330 (1986).Google Scholar
[65] Temkin, H., Antreasyan, A., Olsson, N. A., Pearsall, T. P. and Bean, J. C., Appl. Phys. Lett. 49, 809–11 (1986).Google Scholar