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Grain Boundary Structure and Morphology in 30° <100> Tricrystal Films of Al

Published online by Cambridge University Press:  25 February 2011

N. Thangaraj  and
U. Dahmen
N. Thangaraj
Affiliation:
National Center for Electron Microscopy, Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

The structure and morphology of 30° <100> tilt grain boundaries in tricrystal films of Al have been investigated by conventional and high resolution electron microscopy. By inducing heteroepitaxial growth on single crystal (111) Si substrates, Al formed polycrystalline thin films made of grains in three symmetry-related (100) orientations. The grain boundaries were well-faceted and a number of symmetric and asymmetric tilt boundaries and triple junctions were observed. Their morphology, topology and preferred faceting was related to the 12mm two-dimensional point symmetry of the tricrystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 171
Copyright
Copyright © Materials Research Society 1992

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References

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