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Grain Growth Processes during Transient Annealing of As-Implanted, Polycrystalline-Silicon Films

Published online by Cambridge University Press:  25 February 2011

S.J. Krause ,
S.R. Wilson ,
W.M. Paulson  and
R.B. Gregory
S.J. Krause
Affiliation:
*Dept. of Mechancial and Aerospace Engineering, Arizona State University, Tempe, AZ 85287
S.R. Wilson
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc., 5005 F. McDowell Road, Phoenix, AZ 85008
W.M. Paulson
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc., 5005 F. McDowell Road, Phoenix, AZ 85008
R.B. Gregory
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc., 5005 F. McDowell Road, Phoenix, AZ 85008
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Abstract

Polycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed on a Varian IA 200 rapid thermal annealer. Transmission electron microscopy was used to study through-thickness and cross sectional views of grain size and morphology of as-deposited and of transient annealed films. A bimoda] distribution of grain sizes was present in as-deposited polycrystalline silicon films. The first population was due to columnar growth of some grains to a final average diameter of 20 rm. The second population of small equiaxed grains of 5 nm average diameter were formed early in the deposition process. During transient annealing grains in the first population grew rapidly up to 280-nm equiaxed grains. After this the growth rate decreased due to the grain size reaching the thickness of the film. Grains in the second population grew rapidly up to a size of 150 nm, after which the growth rate was lowered due to grains impinging upon one another. The grain growth processes for both populations have been described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times characteristic of transient annealing processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 721
Copyright
Copyright © Materials Research Society 1985

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References

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